器件名称 详细搜索
产品 LMG3411R150TI
描述

The LMG3411R150 GaN power stage with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems. The LMG3411’s inherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zero reverse recovery to reduce switching losses by as much as 80%, and low switch node ringing to reduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

操作 查看详情 点击下载 购买

目录

h5n2 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
制造商 型号 分类 描述 下载
Renesas Electronics America

Renesas Electro...

H5N2522LSTL-E 半导体FET - 单 mosfet n-ch 250v 20a ldpak
Renata

Renata

H5N2003P-E silicon N channel mos fet high speed power switching
Renata

Renata

H5N2001LD-E silicon N channel mos fet high speed power switching
Renata

Renata

H5N2007FN silicon N channel mos fet high speed power switching
Renata

Renata

H5N2504DSTL-E silicon N channel mos fet high speed power switching