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产品 CSD18537NQ5ATI
描述

这款 10mΩ,60V,SON 5mm x 6mm NexFET 功率 MOSFET 被设计成最大限度地减少功率转换应用中的损耗。顶视图 要了解所有可用封装,请见数据表末尾的可订购产品附录。 RθJA = 40°C/W,这是在一个厚度 0.06 英寸环氧树脂 (FR4) 印刷电路板 (PCB) 上的 1 英寸2,2 盎司 的铜过渡垫片上测得的典型值 。最大 RθJC = 2.1°C/W,脉冲持续时间 ≤ 100µs,占空比≤ 1%

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