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AGR09030EF

Advanced Semiconductor, Inc.

半导体分离式半导体

transistors RF mosfet RF transistor

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AGR09030EF的详细信息

ManufacturerAdvanced Semiconductor, Inc.
Product CategoryTransistors RF MOSFET
RoHSYes
ConfigurationSingle
Transistor PolarityN-Channel
Frequency895 MHz
Vds - Drain-Source Breakdown Voltage65 V
Id - Continuous Drain Current4.25 A
Vgs - Gate-Source Breakdown Voltage15 V
Maximum Operating Temperature+ 200 C
PackagingTray
BrandAdvanced Semiconductor, Inc.
Minimum Operating Temperature- 65 C
Pd - Power Dissipation80 W
Product TypeRF Power Transistor
TypeMOSFET Power
Vgs th - Gate-Source Threshold Voltage5 V

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