器件名称TI

热搜:

型号:
制造商:
类别标签:
描述:

APT33GF120B2RDQ2G

Microsemi Power Products Group

半导体IGBT - 单路

igbt 1200v 64a 357w tmax

在线阅读点击下载

APT33GF120B2RDQ2G的详细信息

Standard Package30
CategoryDiscrete Semiconductor Products
FamilyIGBTs - Single
Series-
PackagingTube
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)64A
Current - Collector Pulsed (Icm)75A
Vce(on) (Max) @ Vge, Ic3V @ 15V, 25A
Power - Max357W
Switching Energy1.315µJ (on), 1.515µJ (off)
Input TypeStandard
Gate Charge170nC
Td (on/off) @ 25°C14ns/185ns
Test Condition800V, 25A, 4.3 Ohm, 15V
Reverse Recovery Time (trr)-
Package / CaseTO-247-3 Variant
Mounting TypeThrough Hole
Supplier Device Package*
Dynamic CatalogStandard IGBTs
Other NamesAPT33GF120B2RDQ2GMIAPT33GF120B2RDQ2GMI-ND

参考报价(批量:单位)

如果没有正常显示,请点击下载pdf文档

DLP-HS-FPGA

如果没有正常显示,请尝试使用Chrome浏览器查看或点击下载 PDF

下载pdf文档
型号分类描述制造商
TCS1200半导体RF 晶体管 (BJT)transistor bipo 55tu-1Microsemi Power Products Group
1014-12半导体RF 晶体管 (BJT)trans RF bipo 39w 5A 55lt1Microsemi Power Products Group
2729-170半导体RF 晶体管 (BJT)trans RF bipo 570w 17a 55ks1Microsemi Power Products Group
2225-4L半导体RF 晶体管 (BJT)trans RF bipo 10w 600ma 55lv1Microsemi Power Products Group
MS1582半导体RF 晶体管 (BJT)trans RF bipo 135w 8A m173Microsemi Power Products Group
MS2209半导体RF 晶体管 (BJT)trans RF bipo 220w 7A m218Microsemi Power Products Group
ARF1505半导体RF FETRF pwr mosfet 300v 25a dieMicrosemi Power Products Group
MS2214半导体RF 晶体管 (BJT)trans bipo npn 300w 8A m218Microsemi Power Products Group
0912-45半导体RF 晶体管 (BJT)trans RF bipo 225w 4.5a 55ct1Microsemi Power Products Group
0912-25半导体RF 晶体管 (BJT)trans RF bipo 125w 2.5a 55ct1Microsemi Power Products Group