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ATP112-TL-H

ON Semiconductor

半导体分离式半导体

mosfet switching device

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ATP112-TL-H的详细信息

ManufacturerON Semiconductor
Product CategoryMOSFET
RoHSYes
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 60 V
Vgs - Gate-Source Breakdown Voltage20 V
Id - Continuous Drain Current- 75 A
Rds On - Drain-Source Resistance43 mOhms
ConfigurationSingle
Qg - Gate Charge33.5 nC
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation40 W
Mounting StyleSMD/SMT
Package / CaseATPAK-2
PackagingReel
BrandON Semiconductor
Fall Time120 ns
Forward Transconductance - Min24 S
Minimum Operating Temperature- 55 C
Rise Time80 ns
SeriesATP112
Factory Pack Quantity3000
Typical Turn-Off Delay Time150 ns

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